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HV switch, variable on-time, push-pull, MOSFET

Fast push-pull switches (half bridges) are very sensitive for reverse currents from inductive load or from increased wiring inductance. Reverse currents may turn-on the intrinsic (parasitic) MOSFET diodes in an undefined way. This can lead to a short circuit within the bridge switching paths with the further result of a catastrophic failure. Please always make sure that no current swings back into the output of switch. This should be verified by oscilloscope measurements at max. 10% of the actual operating voltage. Please connect always sufficient buffer capacitors (preferably ceramic types) directly to the HV inputs and use sufficient series damping resistors in case of long output wiring. Inductive load on MOSFET switches requires always a fast free-wheeling diode network (serial blocking diode + parallel free-wheeling diode). This protective diode network can be installed externally by means of single diodes of the FDA series . It can also be integrated into the switching module as option I-FWDN. Please read the general instructions carefully.

Features:

HV push-pull switch in halfbridge configuration
Two switching paths for fast rise and fall time
Safe operation due to passive switching path locking

Application Note

Products

Options

Products

Compact Series. Low self inductance & very short transition times. Good transient immunity.


Switch Model	Max. Voltage (kV)	Peak Current (A)	Peak Power (MW)	On-Time (ns)	Housing Dimensions (mm3 )	Datasheet
HTS 11-07-HB-C	2 x 1.2	2 x 70	2 x 1.2	50…∞	79 x 38 x 17
HTS 21-07-HB-C	2 x 2.4	2 x 70	2 x 2.4	50…∞	125 x 38 x 17
HTS 31-03-HB-C	2 x 3	2 x 30	2 x 5	50…∞	79 x 38 x 17
HTS 31-13-HB-B-C	2 x 3.9	2 x 130	2 x 0.5	150…∞	79 x 38 x 17
HTS 41-02-HB-LC-C	2 x 4.8	2 x 25	2 x 7	50…∞	79 x 38 x 17
HTS 61-01-HB-C	2 x 6	2 x 15	2 x 22	50…∞	79 x 38 x 17
HTS 61-03-HB-C	2 x 6	2 x 30	2 x 10	70…∞	125 x 38 x 17
HTS 71-13-HB-B-C	2 x 7.8	2 x 130	2 x 1	180…∞	125 x 38 x 17
HTS 91-01-HB-C	2 x 9	2 x 12	2 x 42	50…∞	79 x 38 x 17
HTS 91-02-HB-LC-C	2 x 9.6	2 x 25	2 x 15	70…∞	125 x 38 x 17
HTS 111-13-HB-B-C	2 x 11.7	2 x 130	2 x 1.5	220…∞	158 x 38 x 17
HTS 121-01-HB-C	2 x 12	2 x 15	2 x 44	70…∞	125 x 38 x 17
HTS 181-01-HB-C	2 x 18	2 x 12	2 x 84	70…∞	140 x 38 x 20

Standard Series. Preferably for higher switching frequency at low capacitive load.


Switch Model	Max. Voltage (kV)	Peak Current (A)	Peak Power (MW)	On-Time (ns)	Housing Dimensions (mm3 )	Datasheet
HTS 21-03-GSM	2 x 2	2 x 30	2 x 3.4	80…∞	89 x 64 x 27
HTS 21-06-GSM	2 x 2	2 x 60	2 x 1.7	80…∞	89 x 64 x 27
HTS 31-01-GSM	2 x 3	2 x 15	2 x 16	80…∞	89 x 64 x 27
HTS 31-03-GSM	2 x 3	2 x 30	2 x 8	80…∞	89 x 64 x 27
HTS 41-03-GSM	2 x 4	2 x 30	2 x 7.2	60…∞	112 x 64 x 27
HTS 41-06-GSM	2 x 4	2 x 60	2 x 3.6	60…∞	112 x 64 x 27
HTS 61-01-GSM	2 x 6	2 x 15	2 x 32	60…∞	112 x 64 x 27
HTS 61-03-GSM	2 x 6	2 x 30	2 x 16	60…∞	112 x 64 x 27
HTS 81-03-GSM	2 x 8	2 x 30	2 x 16	150…∞	163 x 64 x 27
HTS 81-06-GSM	2 x 8	2 x 60	2 x 8	150…∞	163 x 64 x 27
HTS 111-03-GSM	2 x 11	2 x 30	2 x 20.4	150…∞	200 x 70 x 28
HTS 111-06-GSM	2 x 11	2 x 60	2 x 10.2	150…∞	200 x 70 x 28
HTS 151-01-GSM	2 x 15	2 x 15	2 x 72	150…∞	163 x 64 x 27
HTS 151-03-GSM	2 x 15	2 x 30	2 x 36	150…∞	163 x 64 x 27
HTS 161-03-GSM	2 x 16	2 x 30	2 x 32	150…∞	263 x 70 x 35
HTS 161-06-GSM	2 x 16	2 x 60	2 x 16	150…∞	263 x 70 x 35
HTS 201-01-GSM	2 x 20	2 x 15	2 x 96	150…∞	200 x 70 x 28
HTS 201-03-GSM	2 x 20	2 x 30	2 x 48	150…∞	200 x 70 x 28
HTS 301-01-GSM	2 x 30	2 x 15	2 x 144	150…∞	263 x 70 x 35
HTS 301-03-GSM	2 x 30	2 x 30	2 x 72	150…∞	263 x 70 x 35
HTS 651-01-GSM	2 x 65	2 x 15	2 x 288	250…∞	312 x 200 x 70
HTS 651-03-GSM	2 x 65	2 x 30	2 x 144	250…∞	312 x 200 x 70

Power Series, Classical Silicon FET. Robust and transient proof due to LC2 driver technology. For high capacitive, resistive & inductive load.


Switch Model	Max. Voltage (kV)	Peak Current (A)	Peak Power (MW)	On-Time (ns)	Housing Dimensions (mm3 )	Datasheet
HTS 81-10-GSM	2 x 8	2 x 100	2 x 3	150…∞	150 x 100 x 58
HTS 81-20-GSM	2 x 8	2 x 200	2 x 1.5	150…∞	150 x 150 x 58
HTS 121-10-GSM	2 x 12	2 x 100	2 x 5	180…∞	200 x 100 x 68
HTS 121-20-GSM	2 x 12	2 x 200	2 x 2.5	180…∞	200 x 150 x 68
HTS 151-10-GSM	2 x 15	2 x 100	2 x 6	180…∞	200 x 100 x 68
HTS 151-20-GSM	2 x 15	2 x 200	2 x 3	230…∞	200 x 150 x 68
HTS 201-10-GSM	2 x 20	2 x 100	2 x 8	180…∞	225 x 100 x 68
HTS 201-20-GSM	2 x 20	2 x 200	2 x 4	230…∞	225 x 150 x 68
HTS 241-10-GSM	2 x 24	2 x 100	2 x 12	200…∞	250 x 100 x 68
HTS 241-20-GSM	2 x 24	2 x 200	2 x 6	250…∞	250 x 150 x 68
HTS 301-10-GSM	2 x 30	2 x 100	2 x 14	200…∞	300 x 100 x 68
HTS 301-20-GSM	2 x 30	2 x 200	2 x 7	250…∞	300 x 150 x 68
HTS 401-10-GSM	2 x 40	2 x 100	2 x 18	250…∞	372 x 100 x 70
HTS 401-20-GSM	2 x 40	2 x 200	2 x 9	250…∞	372 x 150 x 70
HTS 501-10-GSM	2 x 50	2 x 100	2 x 22	250…∞	432 x 100 x 70
HTS 501-20-GSM	2 x 50	2 x 200	2 x 11	250…∞	432 x 150 x 70
HTS 651-10-GSM	2 x 65	2 x 100	2 x 28	300…∞	372 x 300 x 70
HTS 651-20-GSM	2 x 65	2 x 200	2 x 14	300…∞	372 x 350 x 70
HTS 701-10-GSM	2 x 70	2 x 100	2 x 30	300…∞	375 x 300 x 70
HTS 701-20-GSM	2 x 70	2 x 200	2 x 15	300…∞	375 x 350 x 70
HTS 901-10-GSM	2 x 90	2 x 100	2 x 32	300…∞	432 x 300 x 70
HTS 901-20-GSM	2 x 90	2 x 200	2 x 16	300…∞	432 x 350 x 70
HTS 1201-10-GSM	2 x 120	2 x 100	2 x 42	300…∞	512 x 350 x 70
HTS 1201-20-GSM	2 x 120	2 x 200	2 x 21	300…∞	512 x 350 x 70
HTS 1401-10-GSM	2 x 140	2 x 100	2 x 52	300…∞	672 x 350 x 90
HTS 1401-20-GSM	2 x 140	2 x 200	2 x 26	300…∞	672 x 350 x 90

Power Series, Silicon Carbide (SiC) FET. Robust and transient proof due to LC2 driver technology. Approx. 90% less on-resistance and approx. 30% less natural capacitance compared to switches with classical MOSFET. Free-wheeling diodes may be dispensable in many applications due to the extremely fast instrinsic diodes of the SiC FET. For high capacitive, resistive & inductive load.


Switch Model	Max. Voltage (kV)	Peak Current (A)	Peak Power (MW)	On-Time (ns)	Housing Dimensions (mm3 )	Datasheet
HTS 81-15-SiC-GSM	2 x 8	2 x 150	2 x 0.32	100…∞	150 x 100 x 58
HTS 81-30-SiC-GSM	2 x 8	2 x 300	2 x 0.16	100…∞	150 x 150 x 58
HTS 121-15-SiC-GSM	2 x 12	2 x 150	2 x 0.48	120…∞	200 x 100 x 68
HTS 121-30-SiC-GSM	2 x 12	2 x 300	2 x 0.24	120…∞	200 x 150 x 68
HTS 151-15-SiC-GSM	2 x 15	2 x 150	2 x 0.6	150…∞	200 x 100 x 68
HTS 151-30-SiC-GSM	2 x 15	2 x 300	2 x 0.3	150…∞	200 x 150 x 68
HTS 201-15-SiC-GSM	2 x 20	2 x 150	2 x 0.8	150…∞	225 x 100 x 68
HTS 201-30-SiC-GSM	2 x 20	2 x 300	2 x 0.4	150…∞	225 x 150 x 68
HTS 241-15-SiC-GSM	2 x 24	2 x 150	2 x 1	150…∞	250 x 100 x 68
HTS 241-30-SiC-GSM	2 x 24	2 x 300	2 x 0.5	150…∞	250 x 150 x 68
HTS 301-15-SiC-GSM	2 x 30	2 x 150	2 x 1.2	180…∞	300 x 100 x 68
HTS 301-30-SiC-GSM	2 x 30	2 x 300	2 x 0.6	180…∞	300 x 150 x 68
HTS 401-15-SiC-GSM	2 x 40	2 x 150	2 x 1.6	180…∞	372 x 100 x 70
HTS 401-30-SiC-GSM	2 x 40	2 x 300	2 x 0.8	180…∞	372 x 150 x 70
HTS 501-15-SiC-GSM	2 x 50	2 x 150	2 x 2	200…∞	432 x 100 x 70
HTS 501-30-SiC-GSM	2 x 50	2 x 300	2 x 1	200…∞	432 x 150 x 70
HTS 651-15-SiC-GSM	2 x 65	2 x 150	2 x 2.6	200…∞	372 x 300 x 70
HTS 651-30-SiC-GSM	2 x 65	2 x 300	2 x 1.3	200…∞	372 x 350 x 70
HTS 701-15-SiC-GSM	2 x 70	2 x 150	2 x 2.8	220…∞	375 x 300 x 70
HTS 701-30-SiC-GSM	2 x 70	2 x 300	2 x 1.4	220…∞	375 x 350 x 70
HTS 901-15-SiC-GSM	2 x 90	2 x 150	2 x 3.6	220…∞	432 x 300 x 70
HTS 901-30-SiC-GSM	2 x 90	2 x 300	2 x 1.8	220…∞	432 x 350 x 70
HTS 1201-15-SiC-GSM	2 x 120	2 x 150	2 x 4.8	250…∞	512 x 350 x 70
HTS 1201-30-SiC-GSM	2 x 120	2 x 300	2 x 2.4	250…∞	512 x 350 x 70
HTS 1401-15-SiC-GSM	2 x 140	2 x 150	2 x 5.6	250…∞	672 x 350 x 90
HTS 1401-30-SiC-GSM	2 x 140	2 x 300	2 x 2.8	250…∞	672 x 350 x 90

Options


Options	Description
B-CON	Beginner’s Configuration: The standard switch is equipped with various options to simplify first time experiments for users

HFB	High Frequency Burst: Improved burst capability of driver by means of external buffer capacitors. Recommended if more than 10 pulses with less than 10 μs spacing are generated.
HFS	High Frequency Switching: External supply of auxiliary driver voltage (50-350 VDC according to type). Necessary if the specified “Maximum Operating Frequency” shall be exceeded. (2)
LP	Low Pass: Low pass filter at the control input. Propagation delay time will be increased by ~50 ns. Jitter + 500 ps. Improved noise immunity and less critical wiring in high speed applications. (3)
S-TT	Soft Transition Time: ”Turn-On Rise Time” & “Turn-Off Rise Time” increased by ~20%. Simplified EMC design and less critical wiring if the shortest possible edge steepness is not required. (3)
LNC	Low Natural Capacitance: CN reduced by approximately 30%. To minimize capacitive power losses in applications with high switching frequency and high switching voltage (Pc= V2 x C x f).
LL	Low Leakage Current: Off-state current reduced to less than 10% of the specified value. Not available in connection with the cooling fin options and for switches of the UF series.
LN	Low Noise: Internal power driver modified for zero noise emission for a specific period of time. Relevant in conjunction with sensitive detector amplifiers (e.g. SEV/MCP applications) only. (2)
ALL-OFF	“Voltage free pulse output in case of fault or if inhibit is “”L””. Suggested in circuits with positive and negative supply. A pull down-resistor may be required to keep the opened switches potential-free. ”
ISO-25	25 kV Isolation: Isolation Voltage increased to 25 kVDC. Housing dimensions may change for some models.
ISO-40	40 kV Isolation: Isolation Voltage increased to 40 kVDC. Housing dimensions may change for some models. Only in connection with option PT-HV.
ISO-80	80 kV Isolation: Isolation Voltage increased to 80 kVDC. Housing dimensions may change for some models. Only in connection with option PT-HV.
ISO-120	120 kV Isolation: Isolation Voltage increased to 120 kVDC. Housing dimensions may change for some models. Only in connection with option PT-HV.
ISO-200	200 kV Isolation: Isolation Voltage increased to 200 kVDC. Housing dimensions may change for some models. Only in connection with option PT-HV.
I-PC	Integrated Part Components: Integration of small part components according to customer’s specifications (e.g. buffer capacitors
PCC	Pulser Configuration. Switch combined with custom specific part components. Integrated in a flange housing with hv connectors according to the customers specifications. (2)
I-FWD	Integrated Free-Wheeling Diode: Built-in parallel diode with short recovery time. In connection with inductive load only.
I-FWDN	Integrated Free-Wheeling Diode Network:Integrated Free-Wheeling Diode Network: Built-in parallel diode plus serial blocking diode with short recovery time. In connection with inductive load only.
LS-C	LEMO socket for Control Connection. Input Z=100Ω. An assembled linkage cable (1m/3ft) with two plugs and one socket is included in supply. For improved noise immunity. (3)
PT-C	Pigtail for Control Connection: Flexible leads (l=75 mm) with AMP-modu plug. Refers to switching modules with pins only. Suggested for modules with options CF & GCF.
PT-HV	Pigtails for HV Connection: Flexible leads with cable lugs. For increased creepage. PT-HV is standard for all types with >25 kV switching voltage. Not for extremely fast circuits.
ST-HV	Screw Terminals for HV Connection: Threaded inserts at the bottom of module for PCB attachment. Operation above 25 kV requires liquid insulation (Galden®/Oil) or potting.
SEP-C	Separated Control Unit: Control unit with LED indicators in a separate housing (dim. 79x38x17 mm). Linkage cable (<1m) with plug. Control unit with soldering pins or pigtails.
FOI-I	Fibre Optics Input / Inhibit: Additional optical inhibit input to turn-off the switch by using the inhibit input with a fibre-optical signal (only in combination with option SEP-C) (2)
FOI-C	Fibre Optics Input / Control: Additional optical control input to trigger the switch with a fibre-optical signal (only in combination with option SEP-C) (2)
FOO-F	Fibre Optical Output / Fault: Additional optical output to read-out the failure condition with a fibre-optical signal (only in combination with option SEP-C) (2)
UL94	Flame Retardant Casting Resin:Flame Retardant Casting Resin: Casting resin according to UL-94-VO. Minimum order quantity required. (2)
FH	Flange Housing: Plastic flange housing for isolated attachment on conductive surfaces. Ideal if the switch is not intended for printed circuit boards. Option PT-HV is suggested.
TH	Tubular Housing:Tubular Housing: Tubular instead of rectangular housing. Adaption to specific ambient conditions or in case of difficult assembly situations. (2)
FC	Flat Case: Height of standard plastic housings reduced to 19 mm or less. Not in combination with cooling options CF
ITC	Increased Thermal Conductivity: Special moulding process to increase the thermal conductivity of the module. Pd(max) will be increased by approx. 20-30%. (2)
CF	Copper Cooling Fins d = 0.5 mm: Fin height 35 mm. Nickel plated. For air cooling with forced or natural convection as well as for liquid cooling with non-conductive coolants.
CF-1	Copper Cooling Fins d = 1 mm: Fin thickness 1.0 mm instead of 0.5 mm. The Max. Power Dissipation Pd(max) will be increased by ~80 %. For air or liquid cooling (e.g. Galden® or oil).
CF-X2	“Copper Cooling Fins “”XL””: Fin area enlarged by factor 2. Recommended for natural air convection. No significant cooling power improvement in connection with forced air or liquid cooling.”
CF-X3	“Copper Cooling Fins “”XXL””: Fin area enlarged by factor 3. Recommended for natural air convection. No significant cooling power improvement in connection with forced air or liquid cooling.”
CF-CS	Copper Cooling Fins with customized shape: Individual shape to meet specific OEM requirements. (2) Can be combined with options CF-1
CF-LC	Copper Cooling Fins for liquid cooling: Double fins
CF-D	Double Copper Cooling Fins: Approx. 100% more cooling power
CF-S	Copper Cooling Fins: Semiconductors soldered on fins. Approx. 30% to 100% more cooling power (type depending). Combinable with options CF-D
CF-GRA	Non-isolated Cooling Fins made of graphite: Very light weight compared to copper at similar heat transfer
CF-CER	Isolated Cooling Fins made of ceramics: Heat transfer properties similar to alumina. Forced convection recommended due to 2 mm spacing between fins. Height 35 mm.
CCS	Ceramic Cooling Surface: Top side of switching module made of ceramics. Heat transfer properties similar to alumina. Max. 20 kVDC isolation. Forced convection recommended.
CCF	Ceramic Cooling Flange: Bottom side of switching module made of a plano grinded ceramic plate. Integrated metal frame for uniform and safe contact pressure. Max. 40 kVDC isolation.
C-DR	Cooling for Driver:Cooling for Driver: Extra cooling for the driver and control electronics. Recommended in combination with option HFS at higher switching frequencies. (2)
GCF	Grounded Cooling Flange:Grounded Cooling Flange: Nickel-plated copper flange for medium power. Max. isolation voltage 40kV. Increased coupling capacitance CC.
GCF-X2	Grounded Cooling Flange
ILC	Indirect Liquid Cooling: Liquid cooling for all kind of conductive coolants incl. water. Internal heat exchanger made of ceramics. For medium power dissipation.
DLC	Direct Liquid Cooling: Internal cooling channels arround the power semiconductors. The most efficient cooling for high frequency applications. Non-conductive coolants only.
HI-REL	High Reliability / MIL Versions:High Reliability / MIL Versions: Available on request. (2)

[1]	New option code: Data sheets may differ from this coding system (especially older ones) and do not indicate all possible options as per above table.
[2]	Please consult factory for detailed information.
[3]	These options are EMC-relevant and are recommended for industrial power applications

HV switch, variable on-time, push-pull, MOSFET

Compact Series. Low self inductance & very short transition times. Good transient immunity.

Standard Series. Preferably for higher switching frequency at low capacitive load.

Power Series, Classical Silicon FET. Robust and transient proof due to LC2 driver technology. For high capacitive, resistive & inductive load.

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